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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH81 PNP 1 GHz switching transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
FEATURES * Low cost * High transition frequency. 1 DESCRIPTION The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its complement is the PMBTH10. 2 3 PINNING PIN base emitter collector
1 Top view
PMBTH81
DESCRIPTION Code: V31
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot Cce Ccb fT Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage total power dissipation collector-emitter capacitance collector-base capacitance transition frequency open base Ts = 45 C (note 1) VCB = 10 V; IB = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 C CONDITIONS open emitter - - - - - 600 MIN. MAX. 20 20 400 0.65 0.85 - V V mW pF pF MHz UNIT
September 1995
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Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Ts = 45 C (note 1) open emitter open base open collector CONDITIONS
PMBTH81
MIN. - - - - - -65 -
MAX. 20 20 3 40 400 150 150
UNIT V V V mA mW C C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE sat VBE on ICBO IEBO hFE Cce Ccb fT PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter ON voltage collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter capacitance collector-base capacitance transition frequency CONDITIONS open emitter; IC = 10 A; IE = 0 open base; IC = 1 mA; IB = 0 open collector; IE = 10 A; IC = 0 IC = 5 mA; IB = 0.5 mA VCE = 10 V; IC = 5 mA VCB = 10 V; IE = 0 VEB = 2 V; IC = 0 VCE = 10 V; IC = 5 mA VCB = 10 V; IB = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb = 25 C MIN. 20 20 3 - - - - 60 - - 600 MAX. - - - 0.5 0.9 100 100 - 0.65 0.85 - pF pF MHz UNIT V V V V V nA nA PARAMETER from junction to soldering point (note 1) THERMAL RESISTANCE 260 K/W
September 1995
3
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
handbook, halfpage
-30
MRA568
b11 (mS) -50
930 MHz 450 MHz 250 MHz IC = 4 mA 100 MHz
handbook, halfpage
120
MRA566
100 MHz
IC = 12 mA 250 MHz 8 mA 450 MHz 4 mA 930 MHz
b21 (mS) 80
-70
8 mA
40 -90 12 mA -110 -20
20
60
100
140 g11 (mS)
0 -120
-80
-40
0 g21 (mS)
40
VCB = 10 V; Tamb = 25 C.
VCB = 10 V; Tamb = 25 C.
Fig.2 Common base input admittance (Y11).
Fig.3 Forward transfer admittance (Y21).
handbook, halfpage
0
MRA570
b12 (mS) -2
100 MHz 250 MHz 450 MHz IC = 12 mA 8 mA 4 mA
handbook, halfpage
12
MRA569
b22 (mS) 8
930 MHz IC = 4 mA
-4
8 mA 12 mA 4 450 MHz 250 MHz 100 MHz
-6 930 MHz
-8 -2.5
-2
-1.5
-1
-0.5 0 g12 (mS)
0 0 1 2 3 g22 (mS) 4
VCB = 10 V; Tamb = 25 C.
VCB = 10 V; Tamb = 25 C.
Fig.4 Reverse transfer admittance (Y12).
Fig.5 Common base output admittance (Y22).
September 1995
4
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
gain handbook, halfpage bandwidth product (MHz) 800
1000
MRA567
600
400
200
0 0 4 8 12 16 20 IC (mA)
VCE =10 V; f = 100 MHz.
Fig.6
Current gain-bandwidth product as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PMBTH81
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
September 1995
6
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PMBTH81
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
7

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